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A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

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9 Author(s)
Shyh-Fann Ting ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Wen-Tse Hsieh ; Yong-Shiuan Tsair
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Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.

Published in:

IEEE Electron Device Letters  (Volume:23 ,  Issue: 3 )