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The inversion channel mobility of 4H and 6H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been evaluated for its dependence on the re-oxidation annealing (ROA) conditions in a wet oxidizing ambient. The wet ambient was supplied by the pyrogenic reaction of hydrogen and oxygen gas (pyrogenic ROA), where the water vapor content (/spl rho/(H/sub 2/O)) was controlled by adjusting the hydrogen/oxygen gas flow rate. Not only the annealing temperature and the time, but also /spl rho/(H/sub 2/O) are found to be the critical parameters for improving channel mobility. As a result, field-effect channel mobilities as high as 47 cm/sup 2//Vs for 4H and 95 cm/sup 2//Vs for 6H-SiC MOSFETs were achieved by pryrogenic ROA treatment with a /spl rho/(H/sub 2/O) of 50%.