By Topic

Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Lin, W.H. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Pey, K.L. ; Dong, Z. ; Choi, S.Y.-M.
more authors

The effects of postdeposition anneal of chemical vapor deposited silicon nitride are studied. The Si3N4 films were in situ annealed in either H2(2%)/O2 at 950/spl deg/C or N2O at 950/spl deg/C in a rapid thermal oxidation system. It is found that an interfacial oxide was grown at the Si3N4/Si interface by both postdeposition anneal conditions. This was confirmed by thickness measurement and X-ray photoelectronic spectroscopy (XPS) analysis. The devices with H2(2%)/O2 anneal exhibit a lower gate leakage current and improved reliability compared to that of N2O anneal. This improvement is attributed to a greater efficiency of generating atomic oxygen in the presence of a small amount of hydrogen, leading to the elimination of structural defects in the as-deposited Si3N4 film by the atomic oxygen. Good drivability is also demonstrated on a 0.12 μm n-MOSFET device.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )