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High performance SOI DTMOS using a retrograde base with a low impurity surface channel

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3 Author(s)
Feixia Yu ; Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA ; Cheng, M.-C. ; Jun Xu

This paper presents a simulation-based investigation on 0.13 μm SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001