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Heterostructure device on the cleaved edge of a superlattice for terahertz power generation

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5 Author(s)
Gribnikov, Z.S. ; Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA ; Vagidov, N.Z. ; Eisele, H. ; Mitin, V.V.
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A novel device structure for terahertz power generation is proposed. The energy-wave vector dispersion relation ε(k) of electrons in this structure can be designed such that it contains sections of a negative effective mass within favorable ranges of energy ε and wave vector k. This design is based on the parallel electron transport in the combination of a quantum wall and a superlattice. The quantum well is grown on the cleaved edge of this superlattice and provides channel 1 with a low effective electron mass. Electrons in the superlattice as channel 2 have a large effective mass in the lowest quantization miniband of the superlattice. The effective thickness of the channel 2 can be controlled with the electric field from the p-n junction that is formed between n-type sheet doping concentration in the barrier layer of the quantum well and the p-type doping concentration in the superlattice. A simplified calculation scheme for obtaining the hybrid electron dispersion relation for the quantum real space transfer in such a two-channel combination is described and illustrated

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001

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