A study of metal-Ga ohmic metallizations to p-type 6H-SiC

The development of high quality ohmic metallization on p-type SiC is of critical importance to the performance of high temperature/high power SiC devices. In this study the electrical properties of metal-Ga ohmic metallizations on p-type 6H-SiC are reported for Ga doses between 2/spl times/10/sup 15/ and 2/spl times/10/sup 17/ cm/sup -2/ and as deposited and annealed Pt contacts. The direct-write Pt contacts were annealed at 1300 and 1500 /spl deg/C in Ar atmosphere for 20 and 15 min respectively. The I-V characteristics of the contacts were obtained, and the contact resistance was measured using the TLM method. The contact resistance values were then plotted with the Ga dose.