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A study of metal-Ga ohmic metallizations to p-type 6H-SiC

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7 Author(s)
E. N. Kanyogoro ; Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA ; L. Liu ; A. A. Iliadis ; K. A. Jones
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The development of high quality ohmic metallization on p-type SiC is of critical importance to the performance of high temperature/high power SiC devices. In this study the electrical properties of metal-Ga ohmic metallizations on p-type 6H-SiC are reported for Ga doses between 2×1015 and 2×1017 cm-2 and as deposited and annealed Pt contacts. The direct-write Pt contacts were annealed at 1300 and 1500 °C in Ar atmosphere for 20 and 15 min respectively. The I-V characteristics of the contacts were obtained, and the contact resistance was measured using the TLM method. The contact resistance values were then plotted with the Ga dose

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Semiconductor Device Research Symposium, 2001 International

Date of Conference: