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Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

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2 Author(s)
Malm, B.G. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol. (KTH), Kista, Sweden ; Ostling, M.

Mixed mode circuit and device simulation has been used to investigated the linearity i.e. harmonic distortion for high-speed low voltage SiGe HBTs. Different Ge-profiles for reduced harmonic distortion have been discussed and compared to a conventional high-speed graded Ge-profile. Other RF figure-of-merits, such as maximum cut-off frequency and minimum noise figure have also been discussed. The influence of the Ge-profile on harmonic distortion was compared to the influence of different epitaxial collector doping profiles

Published in:
Semiconductor Device Research Symposium, 2001 International

Date of Conference: 2001

Page(s):
498 - 501
Meeting Date :
05 Dec 2001-07 Dec 2001
Print ISBN:
0-7803-7432-0
INSPEC Accession Number:
7321436
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/ISDRS.2001.984555

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