By Topic

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
F. Aniel ; Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; M. Enciso-Aguilar ; L. Giguerre ; P. Crozat
more authors

100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference: