Referenced Items are not available for this document.
Field effect transistors based upon the AlGaN/GaN system often demonstrate current slump and premature saturation of the gain, accompanied by degradation of the RF output power and power-added efficiency. It is shown that source resistance modulation under high current injection conditions can produce premature saturation effects consistent with experimental data. Elimination of the effect will require design modifications that increase the threshold for space-charge effects to become significant
Published in:
Semiconductor Device Research Symposium, 2001 International
Date of Conference: 2001
- Page(s):
- 432 - 435
- Meeting Date :
- 05 Dec 2001-07 Dec 2001
- Print ISBN:
- 0-7803-7432-0
- INSPEC Accession Number:
- 7321420
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/ISDRS.2001.984538
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