Referenced Items are not available for this document.
We have demonstrated a broadband GaN push-pull amplifier that used two 1.5 mm AlGaN/GaN HEMTs and a new balun. The balun structure is based on the compensation approach suggested by Marchand, which is preferred for low loss, broadband, and high frequency operation
Published in:
Semiconductor Device Research Symposium, 2001 International
Date of Conference: 2001
- Page(s):
- 391 - 393
- Meeting Date :
- 05 Dec 2001-07 Dec 2001
- Print ISBN:
- 0-7803-7432-0
- INSPEC Accession Number:
- 7321410
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/ISDRS.2001.984526
- Product Type:
- Conference Publications
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