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III-V nitride-based two terminal devices for high power, high-frequency applications

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1 Author(s)
Pavlidis, D. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

III-V Nitride devices have demonstrated impressive high frequency, power and noise performance. Basic transport studies have also been performed theoretically and experimentally in these materials and are primarily driven by the need for better understanding of High Electron Mobility Transistor (HEMT) properties. Although finther investigations are necessary to fully understand the transport properties of IIIV Nitride devices, the studies reported so far suggest the possibility of realizing two-terminal Negative Differential Resistance (NDR) diodes based on these materials. In this paper, the transport characteristics of III-V Nitrides are reviewed first, followed by a presentation of the expected high frequency and power performance. The technology necessary for realizing nitride NDR devices is discussed and first experimental characteristics are reported

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Semiconductor Device Research Symposium, 2001 International

Date of Conference: