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Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

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3 Author(s)
Triplett, G. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; May, G. ; Brown, A.

Statistical experimental design was used to explore the effects of the HEMT channel growth parameters on device performance. A 22 full-factorial central composite circumscribed Box-Wilson design with three center points was implemented. The growth parameters under investigation were the channel growth temperature and interface formation, both of which greatly impact device operation. Interface formation was defined as the method used to form the InAs/AlSb interface

Published in:
Semiconductor Device Research Symposium, 2001 International

Date of Conference: 2001

Page(s):
264 - 265
Meeting Date :
05 Dec 2001-07 Dec 2001
Print ISBN:
0-7803-7432-0
INSPEC Accession Number:
7321377
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/ISDRS.2001.984491
Product Type:
Conference Publications

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