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Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

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3 Author(s)
Triplett, G. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; May, G. ; Brown, A.

Statistical experimental design was used to explore the effects of the HEMT channel growth parameters on device performance. A 22 full-factorial central composite circumscribed Box-Wilson design with three center points was implemented. The growth parameters under investigation were the channel growth temperature and interface formation, both of which greatly impact device operation. Interface formation was defined as the method used to form the InAs/AlSb interface

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Semiconductor Device Research Symposium, 2001 International

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