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Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures

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4 Author(s)
Gelmont, B. ; Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA ; Woolard, D. ; Weidong Zhang ; Globus, T.

The electron transport physics within the conduction-band of resonant tunneling diodes with staggered-bandgap structure is analyzed. Here, the current-voltage characteristic for AlGaSb/InAs/AlGaSb double-barrier tunneling diodes is calculated in the framework of the six-band Kane model. This work demonstrates that the conduction-band electron transport is extremely dependent on the coupling between the conduction and valence bands and that an accurate estimate of current density requires the application of a multi-band model. In addition, the application of a multi-band model yields results that are in excellent agreement with existing experimental measurements on staggered-bandgap structures when well know material parameters are utilized

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001