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Gain compression in GaN HEMT amplifiers

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3 Author(s)
Ahmed, A. ; Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA ; Islam, Syed S. ; Anwar, A.F.M.

Volterra series analysis is used to determine linear and nonlinear gain, output power of a GaN HEMT amplifier. Gain compression defined as the difference between linear and nonlinear gain is reported for varying temperatures. Measured 1-dB gain compression of 17.5 dBm for a 1×500 μm Al0.15Ga0.85N/GaN HEMT at 300 K and at 2 GHz is in excellent agreement with the calculated value of 17 dBm. With the operating frequency increasing from 1 GHz to 6 GHz the 1-dB gain compression point decreases from 20.5 dBm to 13.8 dBm at 300 K. At 2 GHz the 1-dB gain compression point decreases from 17.5 dBm at 300 K to 6.5 dBm at 600 K

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001

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