Referenced Items are not available for this document.
An improved analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and transconductance, output conductance and capacitances for a small signal model
Published in:
Semiconductor Device Research Symposium, 2001 International
Date of Conference: 2001
- Page(s):
- 195 - 198
- Meeting Date :
- 05 Dec 2001-07 Dec 2001
- Print ISBN:
- 0-7803-7432-0
- INSPEC Accession Number:
- 7321360
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/ISDRS.2001.984473
- Product Type:
- Conference Publications
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