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An analytical model for SiC MESFETs

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2 Author(s)
Murray, S.P. ; Xetron Corp., Cincinnati, OH, USA ; Roenker, K.P.

An improved analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and transconductance, output conductance and capacitances for a small signal model

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Semiconductor Device Research Symposium, 2001 International

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