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Polysilicon diodes as temperature sensors for chemical microreaction systems

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4 Author(s)
Karnik, S.V. ; Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA ; Vo, H.X. ; Hatalis, M.K. ; Kothare, M.V.

Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems

Published in:
Semiconductor Device Research Symposium, 2001 International

Date of Conference: 2001

Page(s):
174 - 177
Meeting Date :
05 Dec 2001-07 Dec 2001
Print ISBN:
0-7803-7432-0
INSPEC Accession Number:
7321355
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/ISDRS.2001.984468
Product Type:
Conference Publications

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