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A new lateral conductivity modulated thyristor (LCMT)

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3 Author(s)
Y. S. Lee ; Sch. of Electr. Eng., Seoul Nat. Univ., South Korea ; M. K. Han ; Y. I. Choi

The purpose of our work is to report a new lateral MOS-gated thyristor, named LCMT, with increased safe operating area (SOA) and decreased turn-off characteristics. In the proposed LCMT, the SOA is improved due to increased current saturation capability by elimination of the parasitic thyristor. The turn-off time is decreased by employing a p+ diverter which successfully diverts holes during the turn-off process. Our experimental results show that the LCMT also exhibits positive-temperature characteristics. We compare the results for the LCMT with those of the widely used LIGBT (lateral insulated gate bipolar transistor)

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001