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Oxide roughness enhanced reliability of MOS tunneling diodes

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6 Author(s)
Lin, C.-H. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lee, M.H. ; Hsu, B.-C. ; Chen, K.-F.
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In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices

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Semiconductor Device Research Symposium, 2001 International

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