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Oxide roughness enhanced reliability of MOS tunneling diodes

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6 Author(s)
Lin, C.-H. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lee, M.H. ; Hsu, B.-C. ; Chen, K.-F.
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In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices

Published in:
Semiconductor Device Research Symposium, 2001 International

Date of Conference: 2001

Page(s):
46 - 49
Meeting Date :
05 Dec 2001-07 Dec 2001
Print ISBN:
0-7803-7432-0
INSPEC Accession Number:
7321324
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/ISDRS.2001.984435
Product Type:
Conference Publications

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