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Ozone sensing using In2O3-modified Ga2 O3 thin films

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4 Author(s)
Frank, J. ; Corporate Technol., Siemens AG, Munich, Germany ; Fleischer, M. ; Zimmer, M. ; Meixner, H.

It is shown that at elevated temperatures the conductance of an In 2O3-modified Ga2O3 thin film depends significantly and reversibly on the ozone concentration in the ambient air. This ozone sensitivity is much greater than with pure Ga 2O3 or In2O3 thin films, respectively. The ozone sensitivity of the In2O3-modified Ga2O3 thin film is characterized by an impressive selectivity, and is maximal at an operation temperature of about 600°C. The cross sensitivities to other gases present in ambient conditions are small compared to the ozone sensitivity, thus opening the way to use this system for ambient ozone monitoring. The results are discussed using an electron injection model

Published in:

Sensors Journal, IEEE  (Volume:1 ,  Issue: 4 )