Referenced Items are not available for this document.
The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and onchip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results.
Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Date of Conference: 2-5 Dec. 2001
- Page(s):
- 40.3.1 - 40.3.4
- Meeting Date :
- 02 Dec 2001-05 Dec 2001
- Print ISBN:
- 0-7803-7050-3
- INSPEC Accession Number:
- 7239082
- Conference Location :
- Washington, DC, USA
- Digital Object Identifier :
- 10.1109/IEDM.2001.979656
- Product Type:
- Conference Publications
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