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0.1 /spl mu/m-rule MRAM development using double-layered hard mask

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7 Author(s)
Tsuji, K. ; Silicon Syst. Labs., NEC Corp., Kanagawa, Japan ; Suemitsu, K. ; Mukai, T. ; Nagahara, K.
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0.1 /spl mu/m rule magnetic random access memory (MRAM) was developed using double-layered hard mask of SiO/sub 2//metal. 30% magnetoresistance ratio under switching operation, read and write characteristics for MRAM cell with 0.1/spl times/0.6 /spl mu/m/sup 2/ were observed using current induced magnetic field. It is found that switching current of tunneling magnetoresistance (TMR) device with 0.1 /spl mu/m length can be reduced by thinning free layer and reduction of TMR aspect ratio.

Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference: 2-5 Dec. 2001

Page(s):
36.4.1 - 36.4.4
Meeting Date :
02 Dec 2001-05 Dec 2001
Print ISBN:
0-7803-7050-3
INSPEC Accession Number:
7239065
Conference Location :
Washington, DC, USA
Digital Object Identifier :
10.1109/IEDM.2001.979635

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