By Topic

One-transistor PZT/Al/sub 2/O/sub 3/, SBT/Al/sub 2/O/sub 3/ and BLT/Al/sub 2/O/sub 3/ stacked gate memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
M. Y. Yang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; S. B. Chen ; A. Chin ; C. L. Sun
more authors

We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001