Referenced Items are not available for this document.
Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking the phenomenological description of moving bits to physical conduction models. This model allows flash memory failure rate predictions for different oxide qualities and thicknesses.
Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Date of Conference: 2-5 Dec. 2001
- Page(s):
- 32.1.1 - 32.1.4
- Meeting Date :
- 02 Dec 2001-05 Dec 2001
- Print ISBN:
- 0-7803-7050-3
- INSPEC Accession Number:
- 7239044
- Conference Location :
- Washington, DC, USA
- Digital Object Identifier :
- 10.1109/IEDM.2001.979607
- Product Type:
- Conference Publications
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