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Innovation of 300 mm fab manufacturing with single wafer technology

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19 Author(s)
C. Chen ; Trecenti-Technol. Inc., Ibaraki, Japan ; T. Lin ; J. Jung ; N. Yabuoshi
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In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001