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High speed silicon lateral trench detector on SOI substrate

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7 Author(s)
Min Yang ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Schaub, J. ; Rogers, D. ; Ritter, M.
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Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001