By Topic

A technology simulation methodology for AC-performance optimization of SiGe HBTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. B. Johnson ; Microelectron. Div., IBM, Essex Junction, VT, USA ; A. Stricker ; A. J. Joseph ; J. A. Slinkman

A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe BiCMOS HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation capability is demonstrated for critical HBT AC device characteristics through comparison with experimental devices.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001