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Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs

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11 Author(s)
Ieong, M. ; IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA ; Jones, E.C. ; Kanarsky, T. ; Ren, Z.
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Demonstrated double-gate devices with excellent drive current and short-channel-effect control. The double-gate devices exhibit ideal linear, sub-threshold slope of 60 mV/dec and better than ideal saturated sub-threshold slope of 55 mV/dec. The effective mobility in all device structures follows the universal mobility curve. The symmetric double-gate offers 20% mobility enhancement over a GP device at 1.0 V gate over-drive. Because the double-gate can be operated at a much lower effective-field, substantial mobility enhancement (>2X) over scaled bulk CMOS can be achieved. For the first time, DC operation of double-gate CMOS inverters are demonstrated down to Vdd=0.3 V.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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