Referenced Items are not available for this document.
RIR(Ru/Crystalline-Ta2O5Ru) capacitor with concave structure was studied for the application into multigigabit-scale DRAM device. In this work, several novel technologies were successfully developed to solve current issues in the fabrication of RIR concave capacitor; such as 1) two-step deposition of Ta2 O5 films 2) formation of Ta2O5 spacer 3) new separation process of Ru storage node using maskless etch-back method 4) H2 pre-annealing and 5) Ar plasma pre-treatment on Ru bottom electrode. The RIR concave capacitor (design rule~0.12 μm, node height~0.85 μm) fabricated with these novel technologies showed excellent electrical properties (25fF/cell, 1fA/cell at ± 1V), which indicates that RIR structure is the one of the most promising candidate for the next generation DRAM capacitor
Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Date of Conference: 2001
- Page(s):
- 12.1.1 - 12.1.4
- Meeting Date :
- 02 Dec 2001-05 Dec 2001
- Print ISBN:
- 0-7803-7050-3
- INSPEC Accession Number:
- 7238957
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/IEDM.2001.979480
- Product Type:
- Conference Publications
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