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Simultaneous conduction band and valence band electron field emissions from n-type and p-type silicon field emitter arrays

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2 Author(s)
Meng Ding ; Microsystems Technol. Lab., MIT, Cambridge, MA, USA ; Akinwande, A.I.

We report field emission of electrons from both n-type and p-type silicon field emitter arrays. A two-band field emission model is proposed to explain the observed current voltage characteristics. Three emission regions were observed on the Fowler-Nordheim plots of all devices: conduction band emission at low gate voltages, conduction band emission with current saturation at medium voltages, and simultaneous conduction and valence band emissions at high gate voltages. Experimental data agree with the two-band field emission model.

Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference: 2-5 Dec. 2001

Page(s):
8.6.1 - 8.6.4
Meeting Date :
02 Dec 2001-05 Dec 2001
Print ISBN:
0-7803-7050-3
INSPEC Accession Number:
7238943
Conference Location :
Washington, DC, USA
Digital Object Identifier :
10.1109/IEDM.2001.979462
Product Type:
Conference Publications

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