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Strong and efficient light emission in ITO/Al2O3 superlattice tunnel diode

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5 Author(s)
Chin, Albert ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Liang, C.S. ; Lin, C.Y. ; Wu, C.C.
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We have studied the electroluminescence of ITO/Al2O3 superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20 Å SiO2 tunnel diode and 0.18 μm MOSFET. Besides the small 3 V operation and low power consumption, good reliability is another merit for this device

Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference: 2001

Page(s):
8.3.1 - 8.3.4
Meeting Date :
02 Dec 2001-05 Dec 2001
Print ISBN:
0-7803-7050-3
INSPEC Accession Number:
7238941
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/IEDM.2001.979459
Product Type:
Conference Publications

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