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Anomalous diffusion in the extension region of nanoscale MOSFETs

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3 Author(s)
Fukutome, H. ; Fujitsu Labs. Ltd., Kanagawa, Japan ; Aoyama, T. ; Arimoto, H.

Using STM, we directly observed a cross-section of a nanoscale MOSFET structure and found a tail region with low carrier concentration in the extension region of the MOSFETs. The tail region was spreading in the horizontal direction along the gate oxide layer. The results of inverse modeling from the electric properties of the MOSFETs support the idea that such a tail region dose exists.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001