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We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A/sup 3/ SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1 /spl mu/m nMOSFETs. By engineering the defect distributions in the amorphous layer created by an indium implant, this new process improves by 8% the current drive while maintaining the same I/sub off/. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A/sup 3/ SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.