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A 130 nm generation high density Etox/sup TM/ flash memory technology

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1 Author(s)
Keeney, S.N. ; Intel Corp., Santa Clara, CA, USA

A 130 nm-generation flash memory technology has been developed, optimized for small cell size, high performance low voltage operation and multi-level-cell and embedded logic capability. Memory cell scaling utilizes the architecture features from the 180 nm technology along with channel erase, advanced 130 nm lithography, dielectric scaling, junction scaling, dual trench and dual spacer technology. 32 Mbit flash memories with a 0.16 um/sup 2/ cell size have been built on this technology showing good yield, performance and reliability.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001