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An experimental demonstration is given of the reduction of floating body effects in narrow channel SOI MOSFETs, as manifested by the saturation region subthreshold characteristics, latch-up, and breakdown voltage. The mechanisms responsible for this reduction are explained by original experiments and simulations. These are a deterioration of the carrier lifetime near the channel edges caused by local stress and defects, and a lowering of the source-body built-in potential barrier, resulting from dopant outdiffusion/segregation into the isolation oxide.
Date of Publication: Jan. 2002