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High-performance fully-depleted SOI RF CMOS

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13 Author(s)
C. L. Chen ; Lincoln Lab., MIT, Lexington, MA, USA ; S. J. Spector ; R. M. Blumgold ; R. A. Neidhard
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A T-gate structure has been implemented in the fabrication of fully depleted silicon-on-insulator MOSFETs. The T-gate process is fully compatible with the standard CMOS and the resulting reduction of gate-resistance significantly improved the RF performance. Measured fmax is 76 GHz and 63 GHz for n- and p-MOSFET with 0.2-μm gate length, respectively. At 2 GHz, a minimum noise figure of 0.4 dB was measured on an n-MOSFET with the T-gate structure.

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IEEE Electron Device Letters  (Volume:23 ,  Issue: 1 )