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Nonquasistatic transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

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2 Author(s)
Dubois, E. ; CNRS, Villeneuve d''Ascq, France ; Robilliart, Etienne

A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy under fast switching conditions. The capabilities of this model are exemplified through the simulation of an analog transmission gate to evaluate the impact of charge sharing effects.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )