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High-voltage implanted-emitter 4H-SiC BJTs

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3 Author(s)
Yi Tang ; Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA ; Fedison, J.B. ; Chow, T.P.

Implanted-emitter, epi-base, npn 4H-SiC bipolar junction transistors (BJTs) which show maximum blocking voltage of 500 V and common-emitter current gain (/spl beta/) of 8 are demonstrated. Compared to the previous results (BV/sub CEO/ of 60 V and /spl beta/ of 40), the blocking voltage is greatly improved with reduced current gain due to a decrease of the base transport factor. The samples also show negative temperature coefficient of /spl beta/, similar to the previous samples, easing device paralleling problems.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan. 2002

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