High-voltage implanted-emitter 4H-SiC BJTs

Implanted-emitter, epi-base, npn 4H-SiC bipolar junction transistors (BJTs) which show maximum blocking voltage of 500 V and common-emitter current gain (/spl beta/) of 8 are demonstrated. Compared to the previous results (BV/sub CEO/ of 60 V and /spl beta/ of 40), the blocking voltage is greatly improved with reduced current gain due to a decrease of the base transport factor. The samples also show negative temperature coefficient of /spl beta/, similar to the previous samples, easing device paralleling problems.