By Topic

AlGaN/GaN HEMTs on (111) silicon substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Javorka, P. ; Inst. of Thin Films & Interfaces (ISG-1), Res. Centre Julich, Germany ; Alam, A. ; Wolter, M. ; Fox, A.
more authors

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f/sub max//f/sub T/=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling /spl sim/16 W/mm static heat dissipation.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )