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Bandwidth simulations of 10 Gb/s avalanche photodiodes

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5 Author(s)
Jie Yao ; JDS Uniphase Corp., West Trenton, NJ, USA ; Loi, K.K. ; Baret, P. ; Kwan, S.
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We have described numerical results of a high-bandwidth design of an InGaAs/InP APD without sacrifice in reliability and manufacturability. A thinner multiplication layer reduces avalanche time, and the optimised absorption layer thickness manages the speed trade-off between (i) the high avalanche gain required of a thin absorption layer and (ii) the hole and secondary electron transit times of a thick absorption layer. One-dimensional simulation suggests the possibility of good control of edge breakdown with an optimized design. Substantial further improvement in bandwidth is likely to require alternate design approaches such as a different material (e.g., Si or InAlAs) for the multiplication region and/or an optical waveguide structure

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Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

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