Referenced Items are not available for this document.
Direct bonding of two mirror-polished wafers, without any external applied energy and at low temperature, is an attractive technique for the new generation of ICs, due to the flexibility that the technique offers. This technique can be used for advanced CMOS applications and for MEMS ones, that are MOS compatible. The bonded structure can be obtained using wet or dry activation techniques. The aim of the paper is to provide a method that assures pairs of bonded wafers in case of using a normal thick wafer (~300 μm) and a thin one (less than 100 μm)
Published in:
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
(Volume:2
)
Date of Conference: Oct 2001
- Page(s):
- 399 - 402 vol.2
- Meeting Date :
- 09 Oct 2001-13 Oct 2001
- Print ISBN:
- 0-7803-6666-2
- INSPEC Accession Number:
- 7220035
- Conference Location :
- Sinaia
- Digital Object Identifier :
- 10.1109/SMICND.2001.967493
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
