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The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si

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4 Author(s)
Cheng, C.F. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Sai Kung, China ; Leung, T.C. ; Chan, W.Y. ; Poon, M.C.

Nickel-Induced-Lateral-Crystallization (NILC) is highly considered as a low temperature alternative method for Solid-Phase-Crystallization (SPC). It can be employed to fabricate high performance TFTs. In this paper, the effect of Ni thickness on NILC was studied. It was found that the performance of an NILC TFT was improved when a thicker nickel thin film was used in the NILC process

Published in:

TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology  (Volume:2 )

Date of Conference:

2001