By Topic

The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cheng, C.F. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Sai Kung, China ; Leung, T.C. ; Chan, W.Y. ; Poon, M.C.

Nickel-Induced-Lateral-Crystallization (NILC) is highly considered as a low temperature alternative method for Solid-Phase-Crystallization (SPC). It can be employed to fabricate high performance TFTs. In this paper, the effect of Ni thickness on NILC was studied. It was found that the performance of an NILC TFT was improved when a thicker nickel thin film was used in the NILC process

Published in:

TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology  (Volume:2 )

Date of Conference: