The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si

Nickel-Induced-Lateral-Crystallization (NILC) is highly considered as a low temperature alternative method for Solid-Phase-Crystallization (SPC). It can be employed to fabricate high performance TFTs. In this paper, the effect of Ni thickness on NILC was studied. It was found that the performance of an NILC TFT was improved when a thicker nickel thin film was used in the NILC process.