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Comparative performance, leakage power and switching power of circuits in 150 nm PD-SOI and bulk technologies including impact of SOI history effect

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5 Author(s)
Narendra, S. ; Microprocessor Res. Lab., Intel Corp., Hillsboro, OR, USA ; Tschanz, J. ; Keshavarzi, A. ; Borkar, S.
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History effect measurements on different circuits in a 150 nm SOI technology show no adverse impact on worst-case delay vs. leakage trade-offs. The performance advantage of SOI over bulk is shown to come mostly from capacitance reduction. Hence, it will diminish with technology scaling.

Published in:

VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on

Date of Conference:

14-16 June 2001