Referenced Items are not available for this document.
This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF//spl mu/2, 2.2 /spl mu/m wide shielded unit capacitors, 6% bottom plate capacitance, better than 3-5% process variation and negligible series inductance. Further, a simple yet accurate method is presented that allows hand calculation of the capacitance value.
Published in:
VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on
Date of Conference: 14-16 June 2001
- Page(s):
- 201 - 204
- Meeting Date :
- 14 Jun 2001-16 Jun 2001
- Print ISBN:
- 4-89114-014-3
- INSPEC Accession Number:
- 7081223
- Conference Location :
- Kyoto, Japan
- Digital Object Identifier :
- 10.1109/VLSIC.2001.934238
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
