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Design and characterization of vertical mesh capacitors in standard CMOS

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1 Author(s)
Christensen, K.T. ; Tech. Univ. Denmark, Lyngby, Denmark

This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF//spl mu/2, 2.2 /spl mu/m wide shielded unit capacitors, 6% bottom plate capacitance, better than 3-5% process variation and negligible series inductance. Further, a simple yet accurate method is presented that allows hand calculation of the capacitance value.

Published in:

VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on

Date of Conference:

14-16 June 2001