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Characterization techniques for temperature-dependent experimental analysis of microwave transistors

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3 Author(s)
Alina Caddemi ; Dipt. di Fisica, Messina Univ., Italy ; Nicola Donato ; Mario Sannini

In our research work the effects of temperature on DC behavior, small signal and noise performance of several low-noise transistors at microwave frequencies were investigated by means of different experimental systems down to cryogenic levels. We here present the results of such an extensive investigation together with the details of the experimental procedures followed. The on-wafer cooling set-up was designed and realized in our lab and it exhibited a very good performance characterized by fast settling times. Clear self-heating effects were observed in DC behavior of on-wafer pseudomorphic HEMT's tested over the 220-320 K temperature range.

Note: As originally published the article lists the authors with surname first. This is corrected in the metadata records only so that the names are listed as: Caddemi, A.; Donato, N; Sannini, M.  

Published in:

Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE  (Volume:3 )

Date of Conference:

21-23 May 2001