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Enhanced self aligned contact (SAC) etch stop window by using C4F6 chemistry

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7 Author(s)
Wang, J. ; Appl. Mater., Sunnyvale, CA, USA ; Pu, B. ; Bjokman, C. ; Komatsu, T.
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A self-aligned contact (SAC) process with C4F6 based chemistry has been developed for device technologies of 0.13 μm and beyond using eMax-an advanced dielectric etch system utilizing MERIE technology. Higher nitride selectivity and a wider etch stop window have been achieved. The new SAC process is capable of etching both low and high aspect ratio SAC structures with up to 30:1 nitride corner selectivity, greater than 87° profile, with up to 6500 A/min etch rate. Process trends versus key parameters have been characterized and CO addition effects on nitride selectivity and profile were also evaluated. A stable process performance has been demonstrated with an extended run of 122 RF hours and more than 5288 wafers

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Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI

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