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Sub-1-/spl mu/A dynamic reference voltage generator for battery-operated DRAMs

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6 Author(s)
H. Tanaka ; Hitachi VLSI Eng. Corp., Tokyo, Japan ; Y. Nakagome ; J. Etoh ; E. Yamasaki
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A new reference voltage generator featuring the dynamic operation of a threshold voltage difference (/spl Delta/V/sub T/) generator and voltage-up converter with current mirror circuits has been proposed. This generator efficiently reduces average current to less than 1 /spl mu/A, while maintaining high-accuracy and high-stability. These performances are enough for realizing high-density battery operated DRAMs with a low active and data-retention current comparable to SRAMs.

Published in:

VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on

Date of Conference:

19-21 May 1993