By Topic

Laser-induced antiproton-positron recombination

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
L. A. Melnikov ; Saratov State Univ., Russia ; M. V. Ryabinina

Summary form only given. The most favorable conditions for positron-antiproton capture in traps can be provided when high-density clouds of accumulated antiprotons and positrons are brought and kept together by means of specially chosen electromagnetic field and strong cooling. However, the cross-section of the spontaneous recombination remains very small even at extremely low temperatures. The recombination rate may be increased in an external resonance field. In the present report the possibility of increase the recombination rate by means of laser pulses is estimated. An initial state of antiproton-positron system will belong to a continuous spectrum final state and to a discrete one. Taking into account the possibility to use short pulses, we analyzed system state after the laser pulse.

Published in:

Quantum Electronics Conference, 2000. Conference Digest. 2000 International

Date of Conference:

10-15 Sept. 2000