Referenced Items are not available for this document.
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N/sub 2/O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Published in:
Electron Device Letters, IEEE
(Volume:22
,
Issue:
2
)
Date of Publication: Feb. 2001
- Page(s):
- 68 - 70
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6855937
- Digital Object Identifier :
- 10.1109/55.902834
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Feb. 2001
- Sponsored by :
- IEEE Electron Devices Society
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